Reflectance-Correcting Pyrometry in Thin Film Deposition Applications
A detailed study of an emissivity-correcting pyrometer instrument for measuring wafer surface temperatures during thin film growth is presented. The basic physics is reviewed and preliminary data showing a temperature over-compensation artifact is shown. The rest of the report presents an exhaustive analysis of the potential sources for the temperature over-compensation effect. This analysis yields an in situ calibration method that can be used to remove temperature over-compensation artifacts that arise from any first-order systematic error in either the reflectance or thermal emission measurement. With corrections applied, artifact-free surface temperatures can be measured with a precision of a few {sup o}C over a wide range of wafer emissivities.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 820889
- Report Number(s):
- SAND2003-1868; TRN: US200407%%7
- Resource Relation:
- Other Information: PBD: 1 Jun 2003
- Country of Publication:
- United States
- Language:
- English
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