Simulation of Transport Phenomena in Aluminum Nitride Single-Crystal Growth
The goal of this project is to apply advanced computer-aided modeling techniques for simulating coupled radiation transfer present in the bulk growth of aluminum nitride (AlN) single-crystals. Producing and marketing high-quality single-crystals of AlN is currently the focus of Crystal IS, Inc., which is engaged in building a new generation of substrates for electronic and optical-electronic devices. Modeling and simulation of this company's proprietary innovative processing of AlN can substantially improve the understanding of physical phenomena, assist design, and reduce the cost and time of research activities. This collaborative work supported the goals of Crystal IS, Inc. in process scale-up and fundamental analysis with promising computational tools.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC05-00OR22725
- OSTI ID:
- 814469
- Report Number(s):
- C/ORNL00-0587; TRN: US200317%%253
- Resource Relation:
- Other Information: PBD: 3 Apr 2002
- Country of Publication:
- United States
- Language:
- English
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