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Title: High rate ECR etching of III-V nitride materials

Technical Report ·
DOI:https://doi.org/10.2172/81054· OSTI ID:81054
; ;  [1]; ; ;  [2]; ;  [3]
  1. Sandia National Labs., Albuquerque, NM (United States)
  2. Univ. of Florida, Gainesville, FL (United States)
  3. Auburn Univ., AL (United States)

The III-V nitride compound semiconductors are attracting considerable attention for blue and ultraviolet light emitting diodes (LEDs) and lasers as well as high temperature electronics due to their wide band gaps and high dielectric constants. The recent progress observed in the growth of these materials has not been matched by progress in processing techniques to fabricate more highly sophisticated devices. Patterning these materials has been especially difficult due to the relatively inert chemical nature of the group-III nitrides. The authors review dry etch techniques which have been used to pattern these materials including electron cyclotron resonance (ECR), reactive ion etch (RIE), and chemically assisted ion beam etching (CAIBE). ECR etch rates greater than 3,800 {angstrom}/min for InN, 3,500 {angstrom}/min for GaN, and 1,170 A/min for AlN are reported. Etch anisotropy, surface morphology, and near-surface stoichiometry will be discussed.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
Sponsoring Organization:
USDOE, Washington, DC (United States)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
81054
Report Number(s):
SAND-94-3244C; CONF-950518-6; ON: DE95013032; TRN: AHC29520%%121
Resource Relation:
Conference: 187. meeting of the Electrochemical Society, Reno, NV (United States), 21-26 May 1995; Other Information: PBD: [1994]
Country of Publication:
United States
Language:
English