RADIATION HARDNESS / TOLERANCE OF SI SENSORS / DETECTORS FOR NUCLEAR AND HIGH ENERGY PHYSICS EXPERIMENTS.
Silicon sensors, widely used in high energy and nuclear physics experiments, suffer severe radiation damage that leads to degradations in sensor performance. These degradations include significant increases in leakage current, bulk resistivity, and space charge concentration. The increase in space charge concentration is particularly damaging since it can significantly increase the sensor full depletion voltage, causing either breakdown if operated at high biases or charge collection loss if operated at lower biases than full depletion. Several strategies can be used to make Si detectors more radiation had tolerant to particle radiations. In this paper, the main radiation induced degradations in Si detectors will be reviewed. The details and specifics of the new engineering strategies: material/impurity/defect engineering (MIDE); device structure engineering (DSE); and device operational mode engineering (DOME) will be given.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research (ER) (US)
- DOE Contract Number:
- AC02-98CH10886
- OSTI ID:
- 808409
- Report Number(s):
- BNL-69639; R&D Project: PO24; KA0404; TRN: US0302008
- Resource Relation:
- Conference: PIXEL 2002 INTERNATIONAL WORKSHOP, CARMEL, CA (US), 09/09/2002--09/12/2002; Other Information: PBD: 9 Sep 2002
- Country of Publication:
- United States
- Language:
- English
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