HIGH CHARGE EFFECTS IN SILICON DRIFT DETECTORS WITH LATERAL CONFINEMENT OF ELECTRONS.
Conference
·
OSTI ID:806861
A new drift detector prototype which provides suppression of the lateral diffusion of electrons has been tested as a function of the signal charge up to high charge levels, when electrostatic repulsion is not negligible. The lateral diffusion of the electron cloud has been measured for injected charges up to 2 {center_dot} 10{sup 5} electrons. The maximum number of electrons for which the suppression of the lateral spread is effective is obtained.
- Research Organization:
- Brookhaven National Lab. (BNL), Upton, NY (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research (ER) (US)
- DOE Contract Number:
- AC02-98CH10886
- OSTI ID:
- 806861
- Report Number(s):
- BNL-69558; R&D Project: PO24; KA0404; TRN: US200304%%236
- Resource Relation:
- Conference: IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE 1995, SAN FRANCISCO, CA (US), 10/21/1995--10/28/1995; Other Information: PBD: 21 Oct 1995
- Country of Publication:
- United States
- Language:
- English
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