Inductively Coupled Plasma Reactive Ion Etching of AlGaAsSb and InGaAsSb for Quaternary Antimonide MIM Thermophotovoltaics
In this letter we report on the inductively coupled plasma reactive ion etching (ICP-RIE) of InGaAsSb and AlGaAsSb for the fabrication of quaternary monolithic interconnected module (MIM) thermophotovoltaic (TPV) devices. A rapid dry etch process is described that produces smooth surfaces using BCl[sub]3 for AlGaAsSb and InGaAsSb capped with GaSb. Uncapped InGaAsSb was etched by adding an H[sub]2 plasma preclean to reduce surface oxides. InGaAsSb etch rate was studied as a function of accelerating voltage, RF power, temperature and pressure. The etch conditions found for InGaAsSb were used for AlGaAsSb etching to determine the effectiveness for isolation of the MIM cells.
- Research Organization:
- Bettis Atomic Power Lab., West Mifflin, PA (US); Sandia National Laboratory (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- N00024-98-C-4064
- OSTI ID:
- 805334
- Report Number(s):
- B-T-3447; TRN: US200324%%187
- Resource Relation:
- Other Information: Supercedes report DE00805334; PBD: 1 Oct 2002; PBD: 1 Oct 2002
- Country of Publication:
- United States
- Language:
- English
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