All-vapor processing of P-type tellurium-containing II-VI semiconductor and ohmic contacts thereof
Patent Application
·
OSTI ID:770946
An all dry method for producing solar cells is provided comprising first heat-annealing a II-VI semiconductor; enhancing the conductivity and grain size of the annealed layer; modifying the surface and depositing a tellurium layer onto the enhanced layer; and then depositing copper onto the tellurium layer so as to produce a copper tellurium compound on the layer.
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC36-99GO10337; AC36-83CH10093
- Assignee:
- DOEGC
- Patent Number(s):
- PATENTS-US-A9516686; subCN: XAK-7-17609-01
- Application Number:
- 9-516,686; TRN: US200201%%191
- OSTI ID:
- 770946
- Resource Relation:
- Patent File Date: 2000 Mar 01; Other Information: PBD: 1 Mar 2000
- Country of Publication:
- United States
- Language:
- English
Similar Records
All-vapor processing of p-type tellurium-containing II-VI semiconductor and ohmic contacts thereof
Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors
Use of separate ZnTe interface layers to form ohmic contacts to p-CdTe films
Patent
·
Mon Jan 01 00:00:00 EST 2001
·
OSTI ID:770946
Stable ohmic contacts to thin films of p-type tellurium-containing II-VI semiconductors
Patent
·
Tue Apr 05 00:00:00 EDT 1988
·
OSTI ID:770946
Use of separate ZnTe interface layers to form ohmic contacts to p-CdTe films
Patent
·
Tue Jun 01 00:00:00 EDT 1999
·
OSTI ID:770946