Worst-Case Bias During Total Dose Irradiation of SOI Transistors
Conference
·
OSTI ID:761874
The worst case bias during total dose irradiation of partially depleted SOI transistors (from SNL and from CEA/LETI) is correlated to the device architecture. Experiments and simulations are used to analyze SOI back transistor threshold voltage shift and charge trapping in the buried oxide.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 761874
- Report Number(s):
- SAND2000-2074C; TRN: US0004778
- Resource Relation:
- Conference: 2000 IEEE Nuclear and Space Radiation Effects Conference (NSREC), Reno, NV (US), 07/24/2000--07/28/2000; Other Information: PBD: 15 Aug 2000
- Country of Publication:
- United States
- Language:
- English
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