GaN High Power Devices
Conference
·
OSTI ID:761448
A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN heterojunction bipolar transistors, GaN heterostructure and metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 761448
- Report Number(s):
- SAND2000-1869C; TRN: AH200037%%261
- Resource Relation:
- Conference: Electrochemical Society Meeting, Phoenix, AZ (US), 10/01/2000; Other Information: PBD: 17 Jul 2000
- Country of Publication:
- United States
- Language:
- English
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