Increased medium-range order in amorphous silicon with increased substrate temperature
Abstract
Using fluctuation electron microscopy, the authors have measured the medium-range order of magnetron sputtered silicon thin films as a function of substrate temperature from the amorphous to polycrystalline regimes. They find a smooth increase in the medium-range order of the samples, which they interpret in the context of the paracrystalline structural model as an increase in the size of and/or volume fraction occupied by the paracrystalline grains. These data are counter to the long-standing belief that there is a sharp transition between amorphous and polycrystalline structures as a function of substrate temperature.
- Authors:
- Publication Date:
- Research Org.:
- Argonne National Lab., IL (US)
- Sponsoring Org.:
- US Department of Energy (US)
- OSTI Identifier:
- 761273
- Report Number(s):
- ANL/MSD/CP-102632
TRN: AH200032%%112
- DOE Contract Number:
- W-31109-ENG-38
- Resource Type:
- Conference
- Resource Relation:
- Conference: 8th International Conference on the Structure of Non-Crystalline Materials, Aberystwyth (GB), 08/06/2000--08/11/2000; Other Information: PBD: 15 Aug 2000
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; ORDER PARAMETERS; SILICON; SUBSTRATES; THIN FILMS; AMORPHOUS STATE; TEMPERATURE DEPENDENCE; PHASE TRANSFORMATIONS; POLYCRYSTALS
Citation Formats
Voyles, P M, Gerbi, J E, Treacy, M M. J., Gibson, J M, and Aberlson, J R. Increased medium-range order in amorphous silicon with increased substrate temperature. United States: N. p., 2000.
Web.
Voyles, P M, Gerbi, J E, Treacy, M M. J., Gibson, J M, & Aberlson, J R. Increased medium-range order in amorphous silicon with increased substrate temperature. United States.
Voyles, P M, Gerbi, J E, Treacy, M M. J., Gibson, J M, and Aberlson, J R. 2000.
"Increased medium-range order in amorphous silicon with increased substrate temperature". United States. https://www.osti.gov/servlets/purl/761273.
@article{osti_761273,
title = {Increased medium-range order in amorphous silicon with increased substrate temperature},
author = {Voyles, P M and Gerbi, J E and Treacy, M M. J. and Gibson, J M and Aberlson, J R},
abstractNote = {Using fluctuation electron microscopy, the authors have measured the medium-range order of magnetron sputtered silicon thin films as a function of substrate temperature from the amorphous to polycrystalline regimes. They find a smooth increase in the medium-range order of the samples, which they interpret in the context of the paracrystalline structural model as an increase in the size of and/or volume fraction occupied by the paracrystalline grains. These data are counter to the long-standing belief that there is a sharp transition between amorphous and polycrystalline structures as a function of substrate temperature.},
doi = {},
url = {https://www.osti.gov/biblio/761273},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Aug 15 00:00:00 EDT 2000},
month = {Tue Aug 15 00:00:00 EDT 2000}
}
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