GaN Electronics For High Power, High Temperature Applications
Conference
·
OSTI ID:760777
A brief review is given of recent progress in fabrication of high voltage GaN and AlGaN rectifiers. GaN/AlGaN heterojunction bipolar transistors and GaN metal-oxide semiconductor field effect transistors. Improvements in epitaxial layer quality and in fabrication techniques have led to significant advances in device performance.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 760777
- Report Number(s):
- SAND2000-1467C; TRN: AH200037%%279
- Resource Relation:
- Conference: European Materials Research Society Meeting, Strasbourg (FR), 06/01/2000; Other Information: PBD: 12 Jun 2000
- Country of Publication:
- United States
- Language:
- English
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