A method of producing very high resistivity surface conduction on ceramic accelerator components using metal ion implantation
An important technique used for the suppression of surface flashover on high voltage DC ceramic insulators as well as for RF windows is that of providing some surface conduction to bleed off accumulated surface charge. The authors have used metal ion implantation to modify the surface of high voltage ceramic vacuum insulators to provide a uniform surface resistivity of approximately 5 x 10{sup 10} Q{sup 2}. A vacuum arc ion source based implanter was used to implant Pt at an energy of about 135 MeV to doses of up to more than 5 x 10{sup 16} ions cm{sup 2} into small ceramic test coupons and also into the inside surface of several ceramic accelerator columns 25 cm I. D. by 28 cm long. Here they describe the experimental set-up used to do the ion implantation and summarize the results of their exploratory work on implantation into test coupons as well as the implantations of the actual ceramic columns.
- Research Organization:
- Thomas Jefferson National Accelerator Facility (TJNAF), Newport News, VA (United States)
- Sponsoring Organization:
- USDOE Office of Energy Research (ER) (US)
- DOE Contract Number:
- AC05-84ER40150
- OSTI ID:
- 758480
- Report Number(s):
- JLAB-ACC-97-36; DOE/ER/40150-1711; TRN: US0003965
- Resource Relation:
- Journal Volume: 3; Conference: PAC '97, Vancouver, WA (US), 05/12/1997--05/18/1997; Other Information: PBD: 1 May 1997
- Country of Publication:
- United States
- Language:
- English
Similar Records
Optical image storage in ion implanted PLZT ceramics
Ion-implanted PLZT ceramics: a new high-sensitivity image storage medium