Investigations of chemical vapor deposition of GaN using synchrotron radiation
The authors apply synchrotron x-ray analysis techniques to probe the surface structure of GaN films during synthesis by metal-organic chemical vapor deposition (MOCVD). Their approach is to observe the evolution of surface structure and morphology in real time using grazing incidence x-ray scattering (GIXS). This technique combines the ability of x-rays to penetrate the chemical vapor deposition environment for in situ measurements, with the sensitivity of GIXS to atomic scale structure. In this paper they present examples from some of their studies of growth modes and surface evolution as a function of process conditions that illustrate the capabilities of synchrotron x-ray analysis during MOCVD growth. They focus on studies of the homoepitaxial growth mode, island coarsening dynamics, and effects of impurities.
- Research Organization:
- Argonne National Lab., IL (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 755890
- Report Number(s):
- ANL/MSD/CP-101980; TRN: AH200021%%96
- Resource Relation:
- Conference: 197th Meeting of the Electrochemical Society, Toronto, Ontario (CA), 05/14/2000--05/19/2000; Other Information: PBD: 25 May 2000
- Country of Publication:
- United States
- Language:
- English
Similar Records
Metalorganic chemical vapor deposition growth of high-mobility AlGaN/AlN/GaN heterostructures on GaN templates and native GaN substrates
Transition between the 1 x 1 and ({radical}3 x 2{radical}3)R30{degree} surface structures of GaN in the vapor-phase environment