Thermodynamics of paracrystalline silicon
Conference
·
OSTI ID:755873
Fluctuation microscopy experiments have shown that the as-deposited structure of amorphous silicon thin films is paracrystalline. A paracrystal consists of small (< 3 nm in diameter) topologically crystalline grains separated by a disordered matrix. Here the authors consider the thermodynamics of paracrystalline silicon as a function of the grain size and the temperature. They offer a simple model that qualitatively explains the observed metastability of the ordered structure at low temperature (300 K), the relaxation towards a more disordered structure at intermediate temperatures (600 K), and the recrystallization at high temperatures (1,000 K).
- Research Organization:
- Argonne National Lab., IL (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- W-31109-ENG-38
- OSTI ID:
- 755873
- Report Number(s):
- ANL/MSD/CP-101848; TRN: AH200021%%86
- Resource Relation:
- Conference: 2000 MRS Spring Meeting, San Francisco, CA (US), 04/24/2000--04/28/2000; Other Information: PBD: 9 May 2000
- Country of Publication:
- United States
- Language:
- English
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