Mechanisms of transition-metal gettering in silicon
Journal Article
·
· Journal of Applied Physics
The atomic process, kinetics, and equilibrium thermodynamics underlying the gettering of transition-metal impurities in Si are reviewed from a mechanistic perspective. Methods for mathematical modeling of gettering are reviewed and illustrated. Needs for further research are discussed.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 753385
- Report Number(s):
- SAND2000-0762J; TRN: AH200018%%323
- Journal Information:
- Journal of Applied Physics, Other Information: Submitted to Journal of Applied Physics; PBD: 23 Mar 2000
- Country of Publication:
- United States
- Language:
- English
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