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Title: MOCVD growth and characterization of (Ba{sub x}Sr{sub 1{minus}x})Ti{sub 1+y}O{sub 3+z} thin films for high frequency devices

Abstract

The authors have investigated the structural and electrical characteristics of (Ba{sub x}Sr{sub 1{minus}x})Ti{sub 1+y}O{sub 3+z} (BST) thin films. The BST thin films were deposited at 650 C on platinized silicon with good thickness and composition uniformity using a large area, vertical liquid-delivery metalorganic chemical vapor deposition (MOCVD) system. The (Ba+Sr)/Ti ratio of the BST films was varied from 0.96 to 1.05 at a fixed Ba/Sr ratio of 70/30, as determined using x-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). Patterned Pt top electrodes were deposited onto the BST films at 350 C through a shadow mask using electron beam evaporation. Annealing the entire capacitor structure in air at 700 C after deposition of top electrodes resulted in a substantial reduction of the dielectric loss. Useful dielectric tunability as high as 2.3:1 was measured.

Authors:
; ; ; ; ; ; ; ; ;
Publication Date:
Research Org.:
Argonne National Lab., IL (US)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
751872
Report Number(s):
ANL/MSD/CP-100847
TRN: AH200018%%396
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Conference
Resource Relation:
Conference: MRS '99 Fall Meeting, Boston, MA (US), 11/29/1999--12/03/1999; Other Information: PBD: 18 Jan 2000
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; BARIUM COMPOUNDS; STRONTIUM TITANATES; TITANATES; CHEMICAL VAPOR DEPOSITION

Citation Formats

Baumann, P K, Streiffer, S K, Im, J, Baldo, P, McCormick, A, Auciello, O, Kaufman, D Y, Erck, R A, Giumarra, J, and Zebrowski, J. MOCVD growth and characterization of (Ba{sub x}Sr{sub 1{minus}x})Ti{sub 1+y}O{sub 3+z} thin films for high frequency devices. United States: N. p., 2000. Web.
Baumann, P K, Streiffer, S K, Im, J, Baldo, P, McCormick, A, Auciello, O, Kaufman, D Y, Erck, R A, Giumarra, J, & Zebrowski, J. MOCVD growth and characterization of (Ba{sub x}Sr{sub 1{minus}x})Ti{sub 1+y}O{sub 3+z} thin films for high frequency devices. United States.
Baumann, P K, Streiffer, S K, Im, J, Baldo, P, McCormick, A, Auciello, O, Kaufman, D Y, Erck, R A, Giumarra, J, and Zebrowski, J. 2000. "MOCVD growth and characterization of (Ba{sub x}Sr{sub 1{minus}x})Ti{sub 1+y}O{sub 3+z} thin films for high frequency devices". United States. https://www.osti.gov/servlets/purl/751872.
@article{osti_751872,
title = {MOCVD growth and characterization of (Ba{sub x}Sr{sub 1{minus}x})Ti{sub 1+y}O{sub 3+z} thin films for high frequency devices},
author = {Baumann, P K and Streiffer, S K and Im, J and Baldo, P and McCormick, A and Auciello, O and Kaufman, D Y and Erck, R A and Giumarra, J and Zebrowski, J},
abstractNote = {The authors have investigated the structural and electrical characteristics of (Ba{sub x}Sr{sub 1{minus}x})Ti{sub 1+y}O{sub 3+z} (BST) thin films. The BST thin films were deposited at 650 C on platinized silicon with good thickness and composition uniformity using a large area, vertical liquid-delivery metalorganic chemical vapor deposition (MOCVD) system. The (Ba+Sr)/Ti ratio of the BST films was varied from 0.96 to 1.05 at a fixed Ba/Sr ratio of 70/30, as determined using x-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). Patterned Pt top electrodes were deposited onto the BST films at 350 C through a shadow mask using electron beam evaporation. Annealing the entire capacitor structure in air at 700 C after deposition of top electrodes resulted in a substantial reduction of the dielectric loss. Useful dielectric tunability as high as 2.3:1 was measured.},
doi = {},
url = {https://www.osti.gov/biblio/751872}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jan 18 00:00:00 EST 2000},
month = {Tue Jan 18 00:00:00 EST 2000}
}

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