KeV Ion Beam Induced Surface Modification of SiC Hydrogen Sensor
Conference
·
OSTI ID:751521
Silicon carbide, a wide-bandgap semiconductor, is currently used to fabricate an efficient high temperature hydrogen sensor. When a palladium coating is applied on the exposed surface of silicon carbide, the chemical reaction between palladium and hydrogen produces a detectable change in the surface chemical potential. Rather than applying a palladium film, we have implanted palladium ions into the silicon face of 6H, n-type Sic samples. The implantation energies and fluences, as well as the results obtained by monitoring the current through the sample in the presence of hydrogen are included in this paper.
- Research Organization:
- Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
- Sponsoring Organization:
- USDOE Office of Science (US)
- DOE Contract Number:
- AC05-96OR22464
- OSTI ID:
- 751521
- Report Number(s):
- ORNL/CP-105629; TRN: AH200037%%96
- Resource Relation:
- Conference: Materials Research Society, Boston, MA (US), 11/29/1999--12/03/1999; Other Information: PBD: 29 Nov 1999
- Country of Publication:
- United States
- Language:
- English
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