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Title: Highly-Efficient Buried-Oxide-Waveguide Laser by selective Oxidation

Journal Article · · IEEE Photonics Technology Letters
OSTI ID:751251

An edge-emitting buried-oxide waveguide (BOW) laser structure employing lateral selective oxidation of AlGaAs layers above and below the active region for waveguiding and current confinement is presented. This laser configuration has the potential for very small lateral optical mode size and high current confinement and is well suited for integrated optics applications where threshold current and overall efficiency are paramount. Optimization of the waveguide design, oxide layer placement, and bi-parabolic grading of the heterointerfaces on both sides of the AlGaAs oxidation layers has yielded 95% external differential quantum efficiency and 40% wall-plug efficiency from a laser that is very simple to fabricate and does not require epitaxial regrowth of any kind.

Research Organization:
Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Organization:
US Department of Energy (US)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
751251
Report Number(s):
SAND2000-0430J; IPTLEL; TRN: US200308%%355
Journal Information:
IEEE Photonics Technology Letters, Other Information: PBD: 15 Feb 2000; ISSN 1041-1135
Country of Publication:
United States
Language:
English