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Title: Processing of CuInSe{sub 2}-based solar cells: Characterization of deposition processes in terms of chemical reaction analyses. Phase 2 Annual Report, 6 May 1996--5 May 1997

Abstract

This report describes research performed by the University of Florida during Phase 2 of this subcontract. First, to study CIGS, researchers adapted a contactless, nondestructive technique previously developed for measuring photogenerated excess carrier lifetimes in SOI wafers. This dual-beam optical modulation (DBOM) technique was used to investigate the differences between three alternative methods of depositing CdS (conventional chemical-bath deposition [CBD], metal-organic chemical vapor deposition [MOCVD], and sputtering). Second, a critical assessment of the Cu-In-Se thermochemical and phase diagram data using standard CALPHAD procedures is being performed. The outcome of this research will produce useful information on equilibrium vapor compositions (required annealing ambients, Sex fluxes from effusion cells), phase diagrams (conditions for melt-assisted growth), chemical potentials (driving forces for diffusion and chemical reactions), and consistent solution models (extents of solid solutions and extending phase diagrams). Third, an integrated facility to fabricate CIS PV devices was established that includes migration-enhanced epitaxy (MEE) for deposition of CIS, a rapid thermal processing furnace for absorber film formation, sputtering of ZnO, CBD or MOCVD of CdS, metallization, and pattern definition.

Authors:
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
US Department of Energy (US)
OSTI Identifier:
751055
Report Number(s):
NREL/SR-520-27296
TRN: AH200006%%78
DOE Contract Number:  
AC36-99GO10337
Resource Type:
Technical Report
Resource Relation:
Other Information: PBD: 20 Oct 1999
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; COPPER SELENIDE SOLAR CELLS; INDIUM SELENIDE SOLAR CELLS; PROGRESS REPORT; NONDESTRUCTIVE TESTING; CHEMICAL COATING; SPUTTERING; PHASE DIAGRAMS; THERMOCHEMICAL DIAGRAMS; RESEARCH PROGRAMS; FABRICATION; PHOTOVOLTAICS; CUINSE2; DEPOSITION PROCESSES; CHEMICAL BATH DEPOSITION; BUFFER-LAYER PROCESSING; THERMOCHEMISTRY; PHASE EQUILIBRIA; DEVICE PROCESSING; PV; MOCVD; CIS

Citation Formats

Anderson, T. Processing of CuInSe{sub 2}-based solar cells: Characterization of deposition processes in terms of chemical reaction analyses. Phase 2 Annual Report, 6 May 1996--5 May 1997. United States: N. p., 1999. Web. doi:10.2172/751055.
Anderson, T. Processing of CuInSe{sub 2}-based solar cells: Characterization of deposition processes in terms of chemical reaction analyses. Phase 2 Annual Report, 6 May 1996--5 May 1997. United States. https://doi.org/10.2172/751055
Anderson, T. 1999. "Processing of CuInSe{sub 2}-based solar cells: Characterization of deposition processes in terms of chemical reaction analyses. Phase 2 Annual Report, 6 May 1996--5 May 1997". United States. https://doi.org/10.2172/751055. https://www.osti.gov/servlets/purl/751055.
@article{osti_751055,
title = {Processing of CuInSe{sub 2}-based solar cells: Characterization of deposition processes in terms of chemical reaction analyses. Phase 2 Annual Report, 6 May 1996--5 May 1997},
author = {Anderson, T},
abstractNote = {This report describes research performed by the University of Florida during Phase 2 of this subcontract. First, to study CIGS, researchers adapted a contactless, nondestructive technique previously developed for measuring photogenerated excess carrier lifetimes in SOI wafers. This dual-beam optical modulation (DBOM) technique was used to investigate the differences between three alternative methods of depositing CdS (conventional chemical-bath deposition [CBD], metal-organic chemical vapor deposition [MOCVD], and sputtering). Second, a critical assessment of the Cu-In-Se thermochemical and phase diagram data using standard CALPHAD procedures is being performed. The outcome of this research will produce useful information on equilibrium vapor compositions (required annealing ambients, Sex fluxes from effusion cells), phase diagrams (conditions for melt-assisted growth), chemical potentials (driving forces for diffusion and chemical reactions), and consistent solution models (extents of solid solutions and extending phase diagrams). Third, an integrated facility to fabricate CIS PV devices was established that includes migration-enhanced epitaxy (MEE) for deposition of CIS, a rapid thermal processing furnace for absorber film formation, sputtering of ZnO, CBD or MOCVD of CdS, metallization, and pattern definition.},
doi = {10.2172/751055},
url = {https://www.osti.gov/biblio/751055}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Oct 20 00:00:00 EDT 1999},
month = {Wed Oct 20 00:00:00 EDT 1999}
}