DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs
Journal Article
·
OSTI ID:750188
The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 750188
- Report Number(s):
- SAND2000-0059J; TRN: AH200008%%56
- Resource Relation:
- Other Information: Submitted to Electronics Letters; PBD: 4 Jan 2000
- Country of Publication:
- United States
- Language:
- English
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