Lattice location of deuterium in plasma and gas charged Mg doped GaN
Conference
·
OSTI ID:750177
The authors have used ion channeling to examine the lattice configuration of deuterium in Mg doped GaN grown by MOCVD. The deuterium is introduced both by exposure to deuterium gas and to ECR plasmas. A density functional approach including lattice relaxation, was used to calculate total energies for various locations and charge states of hydrogen in the wurtzite Mg doped GaN lattice. Computer simulations of channeling yields were used to compare results of channeling measurements with calculated yields for various predicted deuterium lattice configurations.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandia National Lab. (SNL-CA), Livermore, CA (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 750177
- Report Number(s):
- SAND99-3080C; TRN: AH200007%%66
- Resource Relation:
- Conference: MRS 1999 Fall Meeting, Boston, MA (US), 11/29/1999--12/04/1999; Other Information: PBD: 2 Dec 1999
- Country of Publication:
- United States
- Language:
- English
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