Analysis of In-Situ Vibration Monitoring for End-Point Detection of CMP Planarization Processes
This paper details the analysis of vibration monitoring for end-point control in oxide CMP processes. Two piezoelectric accelerometers were integrated onto the backside of a stainless steel polishing head of an IPEC 472 polisher. One sensor was placed perpendicular to the carrier plate (vertical) and the other parallel to the plate (horizontal). Wafers patterned with metal and coated with oxide material were polished at different speeds and pressures. Our results show that it is possible to sense a change in the vibration signal over time during planarization of oxide material on patterned wafers. The horizontal accelerometer showed more sensitivity to change in vibration amplitude compared to the vertical accelerometer for a given polish condition. At low carrier and platen rotation rates, the change in vibration signal over time at fixed frequencies decreased approximately ½ - 1 order of magnitude (over the 2 to 10 psi polish pressure ranges). At high rotation speeds, the vibration signal remained essentially constant indicating that other factors dominated the vibration signaL These results show that while it is possible to sense changes in acceleration during polishing, more robust hardware and signal processing algorithms are required to ensure its use over a wide range of process conditions.
- Research Organization:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 7243
- Report Number(s):
- SAND99-1183C; ON: DE00007243
- Resource Relation:
- Conference: SPIE Symposium on Microelectronics Manufacturing Technologies; Edinburgh, Scotland; 05/19-21/1999
- Country of Publication:
- United States
- Language:
- English
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