Positron annihilation study of P implanted Si

Conference · Wed Jan 01 00:00:00 EST 1992

OSTI ID:7175347

Asoka-Kumar, P; Au, H L; Lynn, K G ^[1]; Sferlazzo, P ^[2]

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1. Brookhaven National Lab., Upton, NY (United States)
2. Eaton Corp., Beverly, MA (United States). SED Division

High-energy ion implantation (above 200 keV) is now commonly used in a variety of VLSI processes. The high energy required for these implants is often achieved by implanting multiply charged ions, which inevitably brings in the problem of low-energy ion contamination. The low-energy contamination is difficult to diagnose and detect. Positron annihilation spectroscopy is used to examine the defect distributions in these high energy implants with varying degrees of contamination.

• Research Organization: Brookhaven National Lab., Upton, NY (United States)
• Sponsoring Organization: USDOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC02-76CH00016
• OSTI ID: 7175347
• Report Number(s): BNL-48148; CONF-9209245-2; ON: DE93004907
• Resource Relation: Conference: 9. international conference on ion implantation technology, Gainesville, FL (United States), 21-24 Sep 1992
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
PHOSPHORUS IONS
ION IMPLANTATION
SILICON
POSITRON DETECTION
ANNIHILATION
MULTICHARGED IONS
SPECTROSCOPY
BASIC INTERACTIONS
CHARGED PARTICLE DETECTION
CHARGED PARTICLES
DETECTION
ELECTROMAGNETIC INTERACTIONS
ELEMENTS
INTERACTIONS
IONS
PARTICLE INTERACTIONS
RADIATION DETECTION
SEMIMETALS
665300* - Interactions Between Beams & Condensed Matter- (1992-)
665100 - Nuclear Techniques in Condensed Matter Physics - (1992-)