GaAs photoconductors to characterize picosecond response in GaAs integrated devices and circuits

Conference · Wed Jan 01 00:00:00 EST 1986

DOI:https://doi.org/10.1007/978-3-642-82979-6_44· OSTI ID:7121551

Hammond, R B; Paulter, N G; Gibbs, A J

Optoelectronic techniques that use femtosecond lasers and promise the precise measurement of transient response in high speed electronic devices and circuits have been under study for several years. We have investigated on-wafer electrical-impulse generation and sampling using femto-second-laser-excited GaAs photoconductors. This approach is applicable to any transmission line structure, it is directly integrable, non-invasive, jitter-free, and it is applicable to both microwave and digital circuits. We have developed the capability to: (a) generate electrical impulses in on-wafer GaAs transmission lines with 3-dB bandwidths in excess of 60 GHz, and (b) sample the electrical impulse response of an on-wafer test structure without jitter and with a 3-dB measurement bandwidth of 103 GHz at a noise level of -67 dBm. We have studied dispersion in GaAs on-wafer coplanar-waveguide transmission lines.

• Research Organization: Los Alamos National Laboratory (LANL), Los Alamos, NM (United States)
• DOE Contract Number: W-7405-ENG-36
• OSTI ID: 7121551
• Report Number(s): LA-UR-86-4285; CONF-8608147-2; ON: DE87003744
• Resource Relation: Journal Volume: 22; Conference: International conference on high-speed electronics, Stockholm, Sweden, 7 Aug 1986
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
PHOTOCONDUCTORS
USES
PULSE GENERATORS
GALLIUM ARSENIDES
GATING CIRCUITS
INTEGRATED CIRCUITS
ARSENIC COMPOUNDS
ARSENIDES
ELECTRONIC CIRCUITS
ELECTRONIC EQUIPMENT
EQUIPMENT
FUNCTION GENERATORS
GALLIUM COMPOUNDS
MICROELECTRONIC CIRCUITS
PNICTIDES
420800* - Engineering- Electronic Circuits & Devices- (-1989)