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Title: Characteristics of current filamentation in high gain photoconductive semiconductor switching

Conference ·
OSTI ID:7115476

Characteristics of current filamentation are reported for high gain photoconductive semiconductor switches (PCSS). Infrared photoluminescence is used to monitor carrier recombination radiation during fast initiation of high gain switching in large (1.5 cm gap) lateral GaAs PCSS. Spatial modulation of the optical trigger, a 200--300 ps pulse width laser, is examined. Effects on the location and number of current filaments, rise time, and delay to high gain switching, minimum trigger energy, and degradation of switch contacts are presented. Implications of these measurements for the theoretical understanding and practical development of these switches are discussed. Efforts to increase current density and reduce switch size and optical trigger energy requirements are described. Results from contact development and device lifetime testing are presented and the impact of these results on practical device applications is discussed.

Research Organization:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Organization:
USDOE; USDOE, Washington, DC (United States)
DOE Contract Number:
AC04-76DP00789
OSTI ID:
7115476
Report Number(s):
SAND-92-0254C; CONF-920671-7; ON: DE92018277
Resource Relation:
Conference: 20. international power modulator symposium, Myrtle Beach, SC (United States), 23-25 Jun 1992
Country of Publication:
United States
Language:
English