skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Characteristics of current filamentation in high gain photoconductive semiconductor switching

Abstract

Characteristics of current filamentation are reported for high gain photoconductive semiconductor switches (PCSS). Infrared photoluminescence is used to monitor carrier recombination radiation during fast initiation of high gain switching in large (1.5 cm gap) lateral GaAs PCSS. Spatial modulation of the optical trigger, a 200--300 ps pulse width laser, is examined. Effects on the location and number of current filaments, rise time, and delay to high gain switching, minimum trigger energy, and degradation of switch contacts are presented. Implications of these measurements for the theoretical understanding and practical development of these switches are discussed. Efforts to increase current density and reduce switch size and optical trigger energy requirements are described. Results from contact development and device lifetime testing are presented and the impact of these results on practical device applications is discussed.

Authors:
; ; ; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (United States)
Sponsoring Org.:
USDOE; USDOE, Washington, DC (United States)
OSTI Identifier:
7115476
Report Number(s):
SAND-92-0254C; CONF-920671-7
ON: DE92018277
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Conference
Resource Relation:
Conference: 20. international power modulator symposium, Myrtle Beach, SC (United States), 23-25 Jun 1992
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; 36 MATERIALS SCIENCE; 47 OTHER INSTRUMENTATION; GALLIUM ARSENIDES; PHOTOCONDUCTIVITY; SEMICONDUCTOR SWITCHES; ELECTRIC CURRENTS; CHROMIUM; CURRENT DENSITY; ELECTRIC CONTACTS; FIBER OPTICS; FILAMENTS; LASER RADIATION; LUMINESCENCE; PHOTOCONDUCTORS; PULSES; SWITCHING CIRCUITS; ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; ELECTRIC CONDUCTIVITY; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELECTRONIC CIRCUITS; ELEMENTS; EQUIPMENT; GALLIUM COMPOUNDS; METALS; PHYSICAL PROPERTIES; PNICTIDES; RADIATIONS; SEMICONDUCTOR DEVICES; SWITCHES; TRANSITION ELEMENTS; 426000* - Engineering- Components, Electron Devices & Circuits- (1990-); 360606 - Other Materials- Physical Properties- (1992-); 440600 - Optical Instrumentation- (1990-)

Citation Formats

Zutavern, F J, Loubriel, G M, O'Malley, M W, Helgeson, W D, McLaughlin, D L, and Denison, G J. Characteristics of current filamentation in high gain photoconductive semiconductor switching. United States: N. p., 1992. Web.
Zutavern, F J, Loubriel, G M, O'Malley, M W, Helgeson, W D, McLaughlin, D L, & Denison, G J. Characteristics of current filamentation in high gain photoconductive semiconductor switching. United States.
Zutavern, F J, Loubriel, G M, O'Malley, M W, Helgeson, W D, McLaughlin, D L, and Denison, G J. 1992. "Characteristics of current filamentation in high gain photoconductive semiconductor switching". United States. https://www.osti.gov/servlets/purl/7115476.
@article{osti_7115476,
title = {Characteristics of current filamentation in high gain photoconductive semiconductor switching},
author = {Zutavern, F J and Loubriel, G M and O'Malley, M W and Helgeson, W D and McLaughlin, D L and Denison, G J},
abstractNote = {Characteristics of current filamentation are reported for high gain photoconductive semiconductor switches (PCSS). Infrared photoluminescence is used to monitor carrier recombination radiation during fast initiation of high gain switching in large (1.5 cm gap) lateral GaAs PCSS. Spatial modulation of the optical trigger, a 200--300 ps pulse width laser, is examined. Effects on the location and number of current filaments, rise time, and delay to high gain switching, minimum trigger energy, and degradation of switch contacts are presented. Implications of these measurements for the theoretical understanding and practical development of these switches are discussed. Efforts to increase current density and reduce switch size and optical trigger energy requirements are described. Results from contact development and device lifetime testing are presented and the impact of these results on practical device applications is discussed.},
doi = {},
url = {https://www.osti.gov/biblio/7115476}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Wed Jan 01 00:00:00 EST 1992},
month = {Wed Jan 01 00:00:00 EST 1992}
}

Conference:
Other availability
Please see Document Availability for additional information on obtaining the full-text document. Library patrons may search WorldCat to identify libraries that hold this conference proceeding.

Save / Share: