Hydrazine N Source for Growth of GaInNAs for Solar Cells
- National Renewable Energy Laboratory
- TECSTAR, Inc.
We evaluate hydrazine (Hy) as a nitrogen precursor source for the growth of GaNAs and GaInNAs for application in 1-eV solar cells lattice-matched to GaAs, and compare it to the more commonly used dimethylhydrazine (DMHy). The incorporation efficiency of N into the GaNAs alloy is found to be one to two orders of magnitude higher with Hy than with DMHy. This high N incorporation makes convenient the growth of GaNAs at higher growth temperatures, Tg=650 C, and arsine flows, AsH3/III=44, than are generally possible with the use of DMHy. GaInNAs and GaNAs solar cells are grown under these growth conditions and compared to a GaAs cell grown under the same conditions to determine the extent to which the poor minority-carrier properties routinely observed for the N-containing material can be attributed to the growth conditions. Finally, the background carrier concentrations for Hy- and DMHy-grown material are compared, and little difference is found between the two sources..
- Research Organization:
- National Renewable Energy Lab. (NREL), Golden, CO (United States)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC36-99-GO10337
- OSTI ID:
- 7076
- Report Number(s):
- NREL/CP-520-26609; ON: DE00007076; TRN: US200306%%281
- Resource Relation:
- Conference: Presented at the Electrochemical Society '99 Proceedings, Seattle, WA (US), 05/02/1999--05/06/1999; Other Information: PBD: 25 May 1999
- Country of Publication:
- United States
- Language:
- English
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