Field profile tailoring in a-Si:H radiation detectors
- Lawrence Berkeley Lab., CA (USA)
- Xerox Palo Alto Research Center, CA (USA)
The capability of tailoring the field profile in reverse-biased a-Si:H diodes by doping and/or manipulating electrode shapes opens a way to many interesting device structures. Charge collection in a-Si:H radiation detectors is improved for high LET particle detection by inserting thin doped layers into the i-layer of the usual p-i-n diode. This buried p-i-n structure enables us to apply higher reverse-bias and the electric field is enhanced in the mid i-layer. Field profiles of the new structures are calculated and the improved charge collection process is discussed. Also discussed is the possibility of field profile tailoring by utilizing the fixed space charges in i-layers and/or manipulating electrode shapes of the reverse-biased p-i-n diodes. 10 refs., 7 figs.
- Research Organization:
- Lawrence Berkeley Lab., CA (USA)
- Sponsoring Organization:
- DOE/ER
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 7069674
- Report Number(s):
- LBL-28681; CONF-900466-2; ON: DE90009208; TRN: 90-026817
- Resource Relation:
- Conference: Spring meeting of the Materials Research Society, San Francisco, CA (USA), 16-21 Apr 1990
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SEMICONDUCTOR DETECTORS
PERFORMANCE TESTING
CHARGED PARTICLES
DOPED MATERIALS
ELECTRIC FIELDS
ELECTRICAL PROPERTIES
ELECTRODES
FABRICATION
FREQUENCY ANALYSIS
GASES
HYDROGEN
ILLUMINANCE
LAYERS
NOISE
OPERATION
SEMICONDUCTOR DIODES
SILICON
STRUCTURAL MODELS
TEMPERATURE EFFECTS
ELEMENTS
FLUIDS
MATERIALS
MEASURING INSTRUMENTS
NONMETALS
PHYSICAL PROPERTIES
RADIATION DETECTORS
SEMICONDUCTOR DEVICES
SEMIMETALS
TESTING
440101* - Radiation Instrumentation- General Detectors or Monitors & Radiometric Instruments