Fast neutron damage in silicon detectors
Radiation effects of fast neutrons have been measured in silicon detectors of varying resistivity irradiated to approx. 10/sup 11/ n/cm/sup 2/ over periods of weeks. The principal damage effect is increased leakage current due to generation of carriers from defect levels in the depletion region. Damage and leakage current constants have been established for detector resistivities between 10 and 27,000 ohm-cm and lie in the range of 0.7 /minus/ 2 /times/ 10E7 sec/cm/sup 2/ (K) for PuBe neutrons. A slight increase in K was observed for higher resistivities which translates into somewhat improved radiation hardness. A fit of this data was attempted to a two-level recombination formulation of the damage constant. 13 refs., 6 figs., 1 tab.
- Research Organization:
- Brookhaven National Lab., Upton, NY (USA); Deutsches Elektronen-Synchrotron (DESY), Hamburg (Germany, F.R.)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 7042321
- Report Number(s):
- BNL-41690; CONF-8806235-1; ON: DE88016737
- Resource Relation:
- Conference: International conference on advanced technology and particle physics, Como, Italy, 12 Jun 1988; Other Information: Portions of this document are illegible in microfiche products
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SEMICONDUCTOR DETECTORS
RADIATION EFFECTS
DAMAGE
EQUATIONS
FAST NEUTRONS
NUMERICAL DATA
SILICON
BARYONS
DATA
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
HADRONS
INFORMATION
MEASURING INSTRUMENTS
NEUTRONS
NUCLEONS
RADIATION DETECTORS
SEMIMETALS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems