Crystalline growth of wurtzite GaN on (111) GaAs
Abstract
Gallium Nitride films were grown on (111) gallium arsenide substrates using reactive rf magnetron sputtering. Despite a 20% lattice mismatch and different crystal structure, wurtzite. Heteroepitaxy was observed for growth temperatures between 550-600{degrees}C. X-ray diffraction patterns revealed (0002) GaN peak with a full-width-half-maximum (FWHM) as narrow as 0.17{degree}. Possible surface reconstructions to explain the epitaxial growth are presented.
- Authors:
-
- California Univ., Berkeley, CA (United States). Dept. of Electrical Engineering and Computer Sciences
- Lawrence Berkeley Lab., CA (United States)
- Publication Date:
- Research Org.:
- Lawrence Berkeley Lab., CA (United States)
- Sponsoring Org.:
- USDOE; National Science Foundation (NSF); USDOE, Washington, DC (United States); National Science Foundation, Washington, DC (United States)
- OSTI Identifier:
- 6959725
- Report Number(s):
- LBL-32258; CONF-911202-85
ON: DE92041165; CNN: 1-442427-21482
- DOE Contract Number:
- AC03-76SF00098
- Resource Type:
- Conference
- Resource Relation:
- Conference: Annual fall meeting of the Materials Research Society, Boston, MA (United States), 2-6 Dec 1991
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; GALLIUM NITRIDES; CRYSTAL GROWTH; DEPOSITION; EPITAXY; GALLIUM ARSENIDES; HEXAGONAL LATTICES; SPUTTERING; SUBSTRATES; X-RAY DIFFRACTION; ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DIFFRACTION; GALLIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; SCATTERING; 360201* - Ceramics, Cermets, & Refractories- Preparation & Fabrication; 360202 - Ceramics, Cermets, & Refractories- Structure & Phase Studies
Citation Formats
Ross, J, Gustafson, T K, and Rubin, M. Crystalline growth of wurtzite GaN on (111) GaAs. United States: N. p., 1991.
Web.
Ross, J, Gustafson, T K, & Rubin, M. Crystalline growth of wurtzite GaN on (111) GaAs. United States.
Ross, J, Gustafson, T K, and Rubin, M. 1991.
"Crystalline growth of wurtzite GaN on (111) GaAs". United States. https://www.osti.gov/servlets/purl/6959725.
@article{osti_6959725,
title = {Crystalline growth of wurtzite GaN on (111) GaAs},
author = {Ross, J and Gustafson, T K and Rubin, M},
abstractNote = {Gallium Nitride films were grown on (111) gallium arsenide substrates using reactive rf magnetron sputtering. Despite a 20% lattice mismatch and different crystal structure, wurtzite. Heteroepitaxy was observed for growth temperatures between 550-600{degrees}C. X-ray diffraction patterns revealed (0002) GaN peak with a full-width-half-maximum (FWHM) as narrow as 0.17{degree}. Possible surface reconstructions to explain the epitaxial growth are presented.},
doi = {},
url = {https://www.osti.gov/biblio/6959725},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Sun Dec 01 00:00:00 EST 1991},
month = {Sun Dec 01 00:00:00 EST 1991}
}
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