Search for improved surface treatment procedures in fabrication of HgI/sub 2/ x-ray spectrometers

Technical Report · Tue Jan 01 00:00:00 EST 1980

DOI:https://doi.org/10.2172/6944844· OSTI ID:6944844

Levi, A.; Burger, A.; Nissenbaum, J.; Schieber, M.; Burshtein, Z.

The influence of various fabrication parameters on the surface quality of HgI/sub 2/ x-ray spectrometers was studied in detail. Exposure of etched HgI/sub 2/ to ambient atmosphere for approx. 24 hours may reduce the electron surface recombination velocity by almost an order of magnitude. Reduction of the etching solution temperature (KI in water) to about 0/sup 0/C and an increase of the KI concentration to approx. 20 wt % are also important.

• Research Organization: Hebrew Univ., Jerusalem (Israel). School of Applied Science and Technology; Negev Nuclear Research Centre, Beersheba (Israel)
• DOE Contract Number: AC08-76NV01183
• OSTI ID: 6944844
• Report Number(s): DOE/NV/01183-212-TP; ON: DE83002424
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
HGI2 SEMICONDUCTOR DETECTORS
SURFACE TREATMENTS
X-RAY SPECTROMETERS
ETCHING
FABRICATION
RECOMBINATION
SURFACE PROPERTIES
TEMPERATURE DEPENDENCE
MEASURING INSTRUMENTS
RADIATION DETECTORS
SEMICONDUCTOR DETECTORS
SPECTROMETERS
SURFACE FINISHING
440103* - Radiation Instrumentation- Nuclear Spectroscopic Instrumentation