Trim simulations and possible studies for edge-on ion irradiation of electron microscope specimens. [Co ions implanted into Si to form CoSi[sub 2]]

Conference · Wed Jan 01 00:00:00 EST 1992

OSTI ID:6880518

Thompson, L J; Allen, C W ^[1]; Frischherz, M C ^[2]; Otero, M P ^[3]

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1. Argonne National Lab., IL (United States)
2. Argonne National Lab., IL (United States) Atominstitut der Oesterreichischen Universitaeten, Vienna (Austria)
3. Argonne National Lab., IL (United States) Fundacao de Tecnologia Industrial (FTI), Lorena, SP (Brazil)

A TRIM code has been modified to simulate a special technique, first described at the Spring 92 MRS Meeting, for in-situ transmission electron microscope (TEM) experiments involving simultaneous ion irradiation, in which the resultant phenomena are observed as in a cross-section TEM specimen without further specimen preparation. Instead of ion-irradiating the film or foil specimen normal to the major surfaces and observing in plan view (i.e., in essentially the same direction), the specimen is irradiated edge-on (i.e., parallel to the major surfaces) and is observed normal to the depth direction of the irradiation. Results of calculations utilizing the modified TRIM code are presented for cases of 200 and 500 keV Co impinging onto the edge of Si films 200 and 600 nm thick. Limitations of the technique are discussed and feasibility of experiments involving implantation of Co into Si and the formation of CoSi[sub 2], which employ this technique, are briefly discussed. 10 refs, 3 figs.

• Research Organization: Argonne National Lab., IL (United States)
• Sponsoring Organization: USDOE; USDOE, Washington, DC (United States)
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 6880518
• Report Number(s): ANL/MSD/CP-78567; CONF-921101-77; ON: DE93006409
• Resource Relation: Conference: 16. Material Research Society international symposium on the scientific basis for nuclear waste management fall meeting, Boston, MA (United States), 30 Nov - 5 Dec 1992
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
COBALT SILICIDES
PRODUCTION
SILICON
ION IMPLANTATION
COBALT IONS
COMPUTERIZED SIMULATION
DEPTH
ION BEAMS
IRRADIATION
KEV RANGE 100-1000
ORIENTATION
TRANSMISSION ELECTRON MICROSCOPY
BEAMS
CHARGED PARTICLES
COBALT COMPOUNDS
DIMENSIONS
ELECTRON MICROSCOPY
ELEMENTS
ENERGY RANGE
IONS
KEV RANGE
MICROSCOPY
SEMIMETALS
SILICIDES
SILICON COMPOUNDS
SIMULATION
TRANSITION ELEMENT COMPOUNDS
665300* - Interactions Between Beams & Condensed Matter- (1992-)
360605 - Materials- Radiation Effects