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Title: Growth Mechanisms and Characterization of Hydrogenated Amorphous-Silicon-Alloy Films, Annual Subcontract Report, 14 February 1991 - 13 February 1992

Technical Report ·
DOI:https://doi.org/10.2172/6873153· OSTI ID:6873153

This report describes an apparatus, constructed and tested, that allows measurement of the surface morphology of as-grown hydrogenated amorphous silicon films with atomic resolution using a scanning tunneling microscope. Surface topologies of 100-[degree][Lambda]-thick intrinsic films, deposited on atomically flat, crystalline Si and GaAs, are reported. These films surfaces are relatively flat on the atomic scale, indicating fairly homogeneous, compact initial film growth. The effect of probe-tip size on the observed topology and the development of atomically sharp probes is discussed. 17 refs, 9 figs.

Research Organization:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Organization:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
DOE Contract Number:
AC36-08GO28308
OSTI ID:
6873153
Report Number(s):
NREL/TP-411-5326; ON: DE93000071
Country of Publication:
United States
Language:
English