Fabrication of detectors and transistors on high-resistivity silicon

Conference · Wed Jun 01 00:00:00 EDT 1988

OSTI ID:6840495

Holland, S

A new process for the fabrication of silicon p-i-n diode radiation detectors is described. The utilization of backside gettering in the fabrication process results in the actual physical removal of detrimental impurities from critical device regions. This reduces the sensitivity of detector properties to processing variables while yielding low diode reverse-leakage currents. In addition, gettering permits the use of processing temperatures compatible with integrated-circuit fabrication. P-channel MOSFETs and silicon p-i-n diodes have been fabricated simultaneously on 10 k..cap omega../center dot/cm<100> silicon using conventional integrated-circuit processing techniques. 25 refs., 5 figs.

• Research Organization: Lawrence Berkeley Lab., CA (USA)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6840495
• Report Number(s): LBL-25520; CONF-8805193-1; ON: DE88016240
• Resource Relation: Conference: Workshop on pixel detectors, Leuven, Belgium, 31 May 1988; Other Information: Portions of this document are illegible in microfiche products
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
SI SEMICONDUCTOR DETECTORS
FABRICATION
CHARGED PARTICLE DETECTION
IMPURITIES
MOSFET
SILICON DIODES
DETECTION
FIELD EFFECT TRANSISTORS
MEASURING INSTRUMENTS
MOS TRANSISTORS
RADIATION DETECTION
RADIATION DETECTORS
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
TRANSISTORS
440104* - Radiation Instrumentation- High Energy Physics Instrumentation