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Title: Low-Cost, High-Efficiency Solar Cells Utilizing GaAs-on-Si Technology, Annual Subcontract Report, 1 August 1991 - 31 July 1992

Abstract

This report describes work to develop technology to deposit GaAs on Si using a nucleation layer of atomic-layer-epitaxy-grown GaAs or AlAs on Si. This ensures two-dimensional nucleation and should lead to fewer defects in the final GaAs layer. As an alternative, we also developed technology for depositing GaAs on sawtooth-patterned Si. Preliminary studies showed that this material can have a very low defect density, [approximately] 1 [times] 10[sup 5] cm[sup [minus]5], as opposed to our conventionally grown GaAs on SL which has a typical defect density of over 1 [times]10[sup 7] cm[sup [minus]2]. Using these two now methods of GaAs-on-Si material growth, we made solar cells that are expected to show higher efficiencies than those of previous cells.

Authors:
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE Office of Energy Efficiency and Renewable Energy (EERE)
OSTI Identifier:
6836731
Report Number(s):
NREL/TP-451-5353
ON: DE93000096
DOE Contract Number:  
AC36-08GO28308
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; ALUMINIUM ARSENIDES; DEPOSITION; GALLIUM ARSENIDE SOLAR CELLS; FABRICATION; GALLIUM ARSENIDES; COST; DEFECTS; EFFICIENCY; MICROSTRUCTURE; NUCLEATION; PHOTOVOLTAIC CONVERSION; PROGRESS REPORT; SILICON; SUBSTRATES; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CONVERSION; CRYSTAL STRUCTURE; DIRECT ENERGY CONVERSION; DIRECT ENERGY CONVERTERS; DOCUMENT TYPES; ELEMENTS; ENERGY CONVERSION; EQUIPMENT; GALLIUM COMPOUNDS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PNICTIDES; SEMIMETALS; SOLAR CELLS; SOLAR EQUIPMENT; photovoltaics; solar cells; silicon; high efficiency; low-cost; gallium arsenide; 140501* - Solar Energy Conversion- Photovoltaic Conversion; 360601 - Other Materials- Preparation & Manufacture; 360602 - Other Materials- Structure & Phase Studies

Citation Formats

Vernon, S. M. Low-Cost, High-Efficiency Solar Cells Utilizing GaAs-on-Si Technology, Annual Subcontract Report, 1 August 1991 - 31 July 1992. United States: N. p., 1993. Web. doi:10.2172/6836731.
Vernon, S. M. Low-Cost, High-Efficiency Solar Cells Utilizing GaAs-on-Si Technology, Annual Subcontract Report, 1 August 1991 - 31 July 1992. United States. https://doi.org/10.2172/6836731
Vernon, S. M. 1993. "Low-Cost, High-Efficiency Solar Cells Utilizing GaAs-on-Si Technology, Annual Subcontract Report, 1 August 1991 - 31 July 1992". United States. https://doi.org/10.2172/6836731. https://www.osti.gov/servlets/purl/6836731.
@article{osti_6836731,
title = {Low-Cost, High-Efficiency Solar Cells Utilizing GaAs-on-Si Technology, Annual Subcontract Report, 1 August 1991 - 31 July 1992},
author = {Vernon, S. M.},
abstractNote = {This report describes work to develop technology to deposit GaAs on Si using a nucleation layer of atomic-layer-epitaxy-grown GaAs or AlAs on Si. This ensures two-dimensional nucleation and should lead to fewer defects in the final GaAs layer. As an alternative, we also developed technology for depositing GaAs on sawtooth-patterned Si. Preliminary studies showed that this material can have a very low defect density, [approximately] 1 [times] 10[sup 5] cm[sup [minus]5], as opposed to our conventionally grown GaAs on SL which has a typical defect density of over 1 [times]10[sup 7] cm[sup [minus]2]. Using these two now methods of GaAs-on-Si material growth, we made solar cells that are expected to show higher efficiencies than those of previous cells.},
doi = {10.2172/6836731},
url = {https://www.osti.gov/biblio/6836731}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Apr 01 00:00:00 EST 1993},
month = {Thu Apr 01 00:00:00 EST 1993}
}