Optical emission studies of reactive species in plasma deposition
Conference
·
OSTI ID:6830612
Optical emission studies of the glow-discharge deposition of a-Si:H alloys reveal the presence of reactive species derived from process gases and impurities. Studies of the dependences of emission intensities upon deposition parameters elucidate the mechanisms of formation of these species. Effects of impurities detected by emission spectroscopy upon a-Si:H film electronic properties are discussed. A model of the chemical reactions involved in film growth is presented.
- Research Organization:
- Brookhaven National Lab., Upton, NY (USA)
- DOE Contract Number:
- AC02-76CH00016
- OSTI ID:
- 6830612
- Report Number(s):
- BNL-29161; CONF-810331-2
- Resource Relation:
- Conference: Conference on tetrahedrally bonded amorphous semiconductors, Carefree, AZ, USA, 12 Mar 1981
- Country of Publication:
- United States
- Language:
- English
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