Laser annealing of ion implanted silicon

Conference · Tue Jan 01 00:00:00 EST 1980

OSTI ID:6825453

White, C W; Appleton, B R; Wilson, S R

Pulsed laser annealing of ion implanted silicon leads to the formation of supersaturated alloys by nonequilibrium crystal growth processes at the interface occurring during liquid phase epitaxial regrowth. The interfacial distribution coefficients from the melt (k') and the maximum substitutional solubilities (C/sub s//sup max/) are far greater than equilibrium values. Both K' and C/sub s//sup max/ are functions of growth velocity. Mechanisms limiting substitutional solubilities are discussed. 5 figures, 2 tables.

• Research Organization: Oak Ridge National Lab., TN (USA); Motorola, Inc., Phoenix, AZ (USA)
• DOE Contract Number: W-7405-ENG-26
• OSTI ID: 6825453
• Report Number(s): CONF-801111-17; TRN: 81-000230
• Resource Relation: Conference: 6. conference on application of accelerators in research and industry, Denton, TX, USA, Nov 1980
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
ION IMPLANTATION
ANNEALING
ANTIMONY ADDITIONS
ARSENIC ADDITIONS
BISMUTH ADDITIONS
GALLIUM ADDITIONS
INDIUM ADDITIONS
KEV RANGE 10-100
KEV RANGE 100-1000
LASER RADIATION
MONOCRYSTALS
SILICON ALLOYS
SOLUBILITY
SUPERSATURATION
ALLOYS
ANTIMONY ALLOYS
ARSENIC ALLOYS
BISMUTH ALLOYS
CRYSTALS
ELECTROMAGNETIC RADIATION
ELEMENTS
ENERGY RANGE
GALLIUM ALLOYS
HEAT TREATMENTS
INDIUM ALLOYS
KEV RANGE
PNICTIDES
RADIATIONS
SATURATION
SEMIMETALS
360605* - Materials- Radiation Effects