Silicon radiation detectors with oxide charge state compensation

Conference · Wed Oct 01 00:00:00 EDT 1986

OSTI ID:6796354

Walton, J T; Goulding, F S

This paper discusses the use of boron implantation on high resistivity P-type silicon before oxide growth to compensate for the presence of charge states in the oxide and oxide/silicon interface. The presence of these charge states on high resistivity P-type silicon produces an inversion layer which causes high leakage currents on N/sup +/P junctions and high surface conductance. Compensating the surface region by boron implantation is shown to result in oxide passivated N/sup +/P junctions with very low leakage currents and with low surface conductance.

• Research Organization: Lawrence Berkeley Lab., CA (USA)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6796354
• Report Number(s): LBL-21566; CONF-861007-27; ON: DE87007180
• Resource Relation: Conference: Nuclear science and nuclear power systems symposium, Washington, DC, USA, 29 Oct 1986; Other Information: Paper copy only, copy does not permit microfiche production
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
P-TYPE CONDUCTORS
ION IMPLANTATION
SI SEMICONDUCTOR DETECTORS
BORON
BREAKDOWN
DOPED MATERIALS
LEAKAGE CURRENT
SILICON
CURRENTS
ELECTRIC CURRENTS
ELEMENTS
MATERIALS
MEASURING INSTRUMENTS
RADIATION DETECTORS
SEMICONDUCTOR DETECTORS
SEMICONDUCTOR MATERIALS
SEMIMETALS
440104* - Radiation Instrumentation- High Energy Physics Instrumentation