Soft x-ray resist characterization: Studies with a laser plasma x-ray source

Conference · Mon Jan 01 00:00:00 EST 1990

OSTI ID:6784341

Kubiak, G. D.; Outka, D. A. ^[1]; Zeigler, J. M. ^[2]

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1. Sandia National Labs., Livermore, CA (USA)
2. Sandia National Labs., Albuquerque, NM (USA)

Little work has been performed to characterize the exposure sensitivity, contrast, and tone of candidate resists for photon energies between 100--300 eV, the range in which projection soft x-ray lithography will be developed. We report here the characterization of near-edge x-ray absorption fine structure (NEXAFS) spectra, exposure sensitivity, contrast, and post-exposure processing of selected polysilane resists at photon energies close to the Si L{sub 2,3} absorption edge (100 eV). We find absorption resonance features in the NEXAFS spectra which we assign to excitation into Si--Si and Si--C {sigma}* orbitals. Using monochromatized XUV exposures on the Si--Si {sigma}* resonance at 105 eV, followed by solvent dissolution development, we have measured the exposure sensitivity curves of these resists. We find sensitivities in the range of 600--3000 mJ/cm{sup 2} and contrasts in the range from 0.5--1.4, depending on the polysilane side chain. We have also performed exposure sensitivity measurements at 92 eV, below the edge. Sensitivity decreases slightly compared to 105 eV exposures and the saturation depth and contrast both increase, as expected. We find also that exposing resist films to oxygen after XUV exposure, but before development increases the sensitivity markedly. 7 figs.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• Sponsoring Organization: DOE/DP
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6784341
• Report Number(s): SAND-90-1534C; CONF-900312-1; ON: DE90013493
• Resource Relation: Conference: Symposium on microlithography, San Jose, CA (USA), 4-9 Mar 1990
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
07 ISOTOPES AND RADIATION SOURCES
INDUSTRIAL RADIOGRAPHY
X-RAY SOURCES
SILANES
ABSORPTION SPECTRA
CONCENTRATION RATIO
DIFFRACTION
ELECTRONIC STRUCTURE
GOLD
LASER-PRODUCED PLASMA
MIRRORS
PHOTOCHEMISTRY
PHOTOEMISSION
QUANTUM EFFICIENCY
RESOLUTION
RESONANCE
SENSITIVITY
SURFACE PROPERTIES
TECHNOLOGY ASSESSMENT
THIN FILMS
WAVELENGTHS
CHEMISTRY
COHERENT SCATTERING
EFFICIENCY
ELEMENTS
EMISSION
EQUIPMENT
FILMS
HYDRIDES
HYDROGEN COMPOUNDS
METALS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
PLASMA
RADIATION SOURCES
SCATTERING
SECONDARY EMISSION
SILICON COMPOUNDS
SPECTRA
TRANSITION ELEMENTS
X-RAY EQUIPMENT
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360602 - Other Materials- Structure & Phase Studies
400101 - Activation
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070204 - Radiation Sources- Industrial Uses
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