Fundamental studies of grain boundary passivation in polycrystalline silicon with application to improved photovoltaic devices. A research report covering work completed from February 1981 to January 1982

Technical Report · Wed Sep 01 00:00:00 EDT 1982

DOI:https://doi.org/10.2172/6742737· OSTI ID:6742737

Seager, C. H.; Ginley, D. S.

Grain boundary barrier heights and other properties were measured on a variety of Wacker poly-Si to test the contention of Redfield that as received samples had no potential barriers and that temperature anneals activate the impurities in the boundaries. Our results show that these generalizations are not true and that a variety of barrier behaviors are found. Several of our new analytical techniques for studying grain boundaries and their passivation have been upgraded, including a new cell for Fourier Transform Infrared (FTIR) studies, electrochemical techniques, and a laser scanning apparatus for imaging grain boundaries. Grain boundaries in a variety of samples have been successfully passivated by the use of both the Kaufman ion source and a dc discharge apparatus. 20% improvements in cell efficiencies have been observed in large grained poly-Si cells, and the time of treatment has been drastically reduced.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 6742737
• Report Number(s): SAND-82-1701; ON: DE83000803
• Resource Relation: Other Information: Portions of document are illegible
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON
GRAIN BOUNDARIES
PASSIVATION
ANNEALING
CURRENT DENSITY
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRIC DISCHARGES
ELECTRIC POTENTIAL
FILL FACTORS
HYDROGEN
IMAGES
IMPURITIES
INFRARED SPECTRA
ION SOURCES
LASERS
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELEMENTS
HEAT TREATMENTS
MICROSTRUCTURE
NONMETALS
PHYSICAL PROPERTIES
SEMIMETALS
SPECTRA
140501* - Solar Energy Conversion- Photovoltaic Conversion