Atomic and electronic structures of novel silicon surface structures
The modification of silicon surfaces is presently of great interest to the semiconductor device community. Three distinct areas are the subject of inquiry: first, modification of the silicon electronic structure; second, passivation of the silicon surface; and third, functionalization of the silicon surface. It is believed that surface modification of these types will lead to useful electronic devices by pairing these modified surfaces with traditional silicon device technology. Therefore, silicon wafers with modified electronic structure (light-emitting porous silicon), passivated surfaces (H-Si(111), Cl-Si(111), Alkyl-Si(111)), and functionalized surfaces (Alkyl-Si(111)) have been studied in order to determine the fundamental properties of surface geometry and electronic structure using synchrotron radiation-based techniques.
- Research Organization:
- Stanford Univ., Stanford Linear Accelerator Center, CA (US)
- Sponsoring Organization:
- USDOE Office of Energy Research, Washington, DC (US)
- DOE Contract Number:
- AC03-76SF00515
- OSTI ID:
- 666057
- Report Number(s):
- SLAC-R-519; ON: DE98059290; TRN: US200305%%636
- Resource Relation:
- Other Information: Supercedes report DE98059290; TH: Thesis (Ph.D.); PBD: Mar 1997; PBD: 1 Mar 1997
- Country of Publication:
- United States
- Language:
- English
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