Effect of recoiled O on damage regrowth and electrical properties of through-oxide implanted Si

Conference · Fri Oct 01 00:00:00 EDT 1982

OSTI ID:6656227

Sadana, D K; Wu, N R; Washburn, J; Current, M; Morgan, A; Reed, D; Maenpaa, M

High dose (4 to 7.5 x 10/sup 15/ cm/sup -2/) As implantations into p-type (100) Si have been carried out through a screen-oxide of thicknesses less than or equal to 775A and without screen oxide. The effect of recoiled O on damage annealing and electrical properties of the implanted layers has been investigated using a combination of the following techniques: TEM, RBS/MeV He/sup +/ channeling, SIMS and Hall measurements in conjunction with chemical stripping and sheet resistivity measurements. The TEM results show that there is a dramatically different annealing behavior of the implantation damage for the through oxide implants (Case I) as compared to implants into bare silicon (Case II). Comparison of the structural defect profiles with O distributions obtained by SIMS demonstrated that retardation in the secondary damage growth in Case I can be directly related with the presence of O. Weak-beam TEM showed that a high density of fine defect clusters (less than or equal to 50A) were present both in Case I and Case II. The electrical profiles showed only 30% of the total As to be electrically active. The structural and electrical results have been explained by a model that entails As-O, Si-O and As-As complex formation and their interaction with the dislocations.

• Research Organization: Lawrence Berkeley Lab., CA (USA)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 6656227
• Report Number(s): LBL-15086; CONF-820945-6; ON: DE83003553
• Resource Relation: Conference: International conference on ion beam modification of materials, Grenoble, France, 6 Sep 1982; Other Information: Portions of document are illegible
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
SILICON
ION IMPLANTATION
ANNEALING
ARSENIC IONS
CARRIER DENSITY
CRYSTAL DEFECTS
ELECTRICAL PROPERTIES
OXYGEN
P-TYPE CONDUCTORS
RUTHERFORD SCATTERING
TRANSMISSION ELECTRON MICROSCOPY
CHARGED PARTICLES
CRYSTAL STRUCTURE
ELASTIC SCATTERING
ELECTRON MICROSCOPY
ELEMENTS
HEAT TREATMENTS
IONS
MATERIALS
MICROSCOPY
NONMETALS
PHYSICAL PROPERTIES
SCATTERING
SEMICONDUCTOR MATERIALS
SEMIMETALS
360605* - Materials- Radiation Effects