Chemical kinetics models for semiconductor processing

Conference · Wed Dec 31 00:00:00 EST 1997

OSTI ID:663558

Coltrin, M E; Creighton, J R ^[1]; Meeks, E; Grcar, J F; Houf, W G ^[2]; Kee, R J ^[3]

---

1. Sandia National Labs., Albuquerque, NM (United States)
2. Sandia National Labs., Livermore, CA (United States)
3. Colorado School of Mines, Golden, CO (United States)

Chemical reactions in the gas-phase and on surfaces are important in the deposition and etching of materials for microelectronic applications. A general software framework for describing homogeneous and heterogeneous reaction kinetics utilizing the Chemkin suite of codes is presented. Experimental, theoretical and modeling approaches to developing chemical reaction mechanisms are discussed. A number of TCAD application modules for simulating the chemically reacting flow in deposition and etching reactors have been developed and are also described.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 663558
• Report Number(s): SAND-97-1828C; CONF-971201-; ON: DE98002574; BR: DP0102011; TRN: AHC29818%%396
• Resource Relation: Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: [1997]
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
40 CHEMISTRY
42 ENGINEERING NOT INCLUDED IN OTHER CATEGORIES
CHEMICAL REACTION KINETICS
SEMICONDUCTOR MATERIALS
MICROELECTRONICS
COMPUTERIZED SIMULATION
CHEMICAL VAPOR DEPOSITION
ETCHING
GAS FLOW
SURFACES
BOUNDARY CONDITIONS