XUV free-electron laser-based projection lithography systems
Free-electron laser sources, driven by rf-linear accelerators, have the potential to operate in the extreme ultraviolet (XUV) spectral range with more than sufficient average power for high-volume projection lithography. For XUV wavelengths from 100 nm to 4 nm, such sources will enable the resolution limit of optical projection lithography to be extended from 0.25 {mu}m to 0.05{mu}m and with an adequate total depth of focus (1 to 2 {mu}m). Recent developments of a photoinjector of very bright electron beams, high-precision magnetic undulators, and ring-resonator cavities raise our confidence that FEL operation below 100 nm is ready for prototype demonstration. We address the motivation for an XUV FEL source for commercial microcircuit production and its integration into a lithographic system, include reflecting reduction masks, reflecting XUV projection optics and alignment systems, and surface-imaging photoresists. 52 refs., 7 figs.
- Research Organization:
- Los Alamos National Lab., NM (USA)
- Sponsoring Organization:
- DOE/AD
- DOE Contract Number:
- W-7405-ENG-36
- OSTI ID:
- 6601520
- Report Number(s):
- LA-UR-90-2975; CONF-9007157-2; ON: DE91000441; TRN: 91-000055
- Resource Relation:
- Conference: SPIE conference on EUV x-ray and gamma-ray instrumentation for astronomy, San Diego, CA (USA), 8-13 Jul 1990
- Country of Publication:
- United States
- Language:
- English
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