MOCVD growth of AlGaN UV LEDs
Issues related to the MOCVD growth of AlGaN, specifically the gas-phase parasitic reactions among TMG, TMA, and NH{sub 3}, are studied using an in-situ optical reflectometer. It is observed that the presence of the well-known gas phase adduct (TMA: NH{sub 3}) could seriously hinder the incorporation behavior of TMGa. Relatively low reactor pressures (30--50 Torr) are employed to grow an AlGaN/GaN SCH QW p-n diode structure. The UV emission at 360 nm (FWHM {approximately} 10 nm) represents the first report of LED operation from an indium-free GaN QW diode.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 658459
- Report Number(s):
- SAND-98-1399C; CONF-980729-; ON: DE98005911; BR: DP0102011; TRN: AHC2DT06%%343
- Resource Relation:
- Conference: SPIE photonics Taiwan `98, Taipei (Taiwan, Province of China), 9-11 Jul 1998; Other Information: PBD: 1998
- Country of Publication:
- United States
- Language:
- English
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