Electron channeling and EBIC studies of polycrystalline silicon sheets

Tsuo, Y S; Matson, R J

Title: Electron channeling and EBIC studies of polycrystalline silicon sheets

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Abstract

Electron channeling and EBIC studies have been performed on silicon sheets grown by the edge-supported pulling (ESP) and low-angle silicon sheet (LASS) processes. We have found that the dominant grain structure of the ESP sheets is long, narrow grains with surface normals oriented near (011); grains with this structure tend to have better electronic quality than random grains. We have also studied the twin-stabilized planar growth material of LASS sheets. This material, grown at 200 cm/sup 2//min, is essentially single-crystal.

Authors:: Tsuo, Y S; Matson, R J

Publication Date:: Tue May 01 00:00:00 EDT 1984

Research Org.:: Solar Energy Research Inst., Golden, CO (USA)

OSTI Identifier:: 6564631

Report Number(s):: SERI/TP-211-2319; CONF-840561-25
ON: DE84004515

DOE Contract Number:: AC02-83CH10093

Resource Type:: Conference

Resource Relation:: Conference: 17. IEEE photovoltaic specialists conference, Orlando, FL, USA, 1 May 1984; Other Information: Portions are illegible in microfiche products. Original copy available until stock is exhausted

Country of Publication:: United States

Language:: English

Subject:: 14 SOLAR ENERGY; 36 MATERIALS SCIENCE; SILICON; ELECTRON CHANNELING; SCANNING ELECTRON MICROSCOPY; LASS GROWTH METHOD; POLYCRYSTALS; SHEETS; CHANNELING; CRYSTAL GROWTH METHODS; CRYSTALS; ELECTRON MICROSCOPY; ELEMENTS; MICROSCOPY; SEMIMETALS; EBIC STUDIES; SILICON SHEETS; EDGE-SUPPORTED PULLING (ESP); LOW-ANGLE SILICON SHEET (LASS); 140501* - Solar Energy Conversion- Photovoltaic Conversion; 360603 - Materials- Properties

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                    Tsuo, Y S, and Matson, R J. Electron channeling and EBIC studies of polycrystalline silicon sheets.  United States: N. p., 1984. 
        Web.

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                    Tsuo, Y S, & Matson, R J. Electron channeling and EBIC studies of polycrystalline silicon sheets.  United States.

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                    Tsuo, Y S, and Matson, R J. 1984.  
        "Electron channeling and EBIC studies of polycrystalline silicon sheets".  United States.  https://www.osti.gov/servlets/purl/6564631.

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@article{osti_6564631,

  title        = {Electron channeling and EBIC studies of polycrystalline silicon sheets},

  author       = {Tsuo, Y S and Matson, R J},

  abstractNote = {Electron channeling and EBIC studies have been performed on silicon sheets grown by the edge-supported pulling (ESP) and low-angle silicon sheet (LASS) processes. We have found that the dominant grain structure of the ESP sheets is long, narrow grains with surface normals oriented near (011); grains with this structure tend to have better electronic quality than random grains. We have also studied the twin-stabilized planar growth material of LASS sheets. This material, grown at 200 cm/sup 2//min, is essentially single-crystal.},

  doi          = {},

  url          = {https://www.osti.gov/biblio/6564631},
  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue May 01 00:00:00 EDT 1984},

  month        = {Tue May 01 00:00:00 EDT 1984}

}

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