Radiation-induced conductivity and high-temperature Q changes in quartz resonators
While high temperature electrolysis has proven beneficial as a technique to remove interstitial impurities from quartz, reliable indices to measure the efficacy of such a processing step are still under development. The present work is directed toward providing such an index. Two techniques have been investigated - one involves measurement of the radiation induced conductivity in quartz along the optic axis, and the second involves measurement of high temperature Q changes. Both effects originate when impurity charge compensators are released from their traps, in the first case resulting in ionic conduction and in the second case resulting in increased acoustic losses. Radiation induced conductivity measurements have been carried out with a 200 kV, 14 mA x-ray machine producing 5 rads/s. With electric fields of the order of 10/sup 4/ V/cm, the noise level in the current measuring system is equivalent to an ionic current generated by quartz impurities in the 1 ppB range. The accuracy of the high temperature ( 300 to 800/sup 0/K) Q/sup -1/ measurement technique will be determined. A number of resonators constructed of quartz material of different impurity contents have been tested and both the radiation induced conductivity and the high temperature Q/sup -1/ results compared with earlier radiation induced frequency and resonator resistance changes. 10 figures.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 6505307
- Report Number(s):
- SAND-81-0126C; CONF-810550-1; TRN: 81-010690
- Resource Relation:
- Conference: 35. annual frequency control symposium, Philadelphia, PA, USA, 27 May 1981
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
QUARTZ
PHYSICAL RADIATION EFFECTS
PURIFICATION
RESONATORS
CATIONS
ELECTRIC CONDUCTIVITY
ELECTROLYSIS
INTERSTITIALS
TEMPERATURE DEPENDENCE
X RADIATION
CHALCOGENIDES
CHARGED PARTICLES
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELECTRONIC EQUIPMENT
EQUIPMENT
IONIZING RADIATIONS
IONS
LYSIS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
POINT DEFECTS
RADIATION EFFECTS
RADIATIONS
SILICON COMPOUNDS
SILICON OXIDES
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems
360605 - Materials- Radiation Effects