Chemical solution deposition of SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) films for non-volatile memory applications

Technical Report · Sun Mar 01 00:00:00 EST 1998

DOI:https://doi.org/10.2172/650293· OSTI ID:650293

Lakeman, C D.E. ^[1]; Boyle, T J; Ruffner, J A; Rodriguez, M A ^[2]

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1. Texas Instruments, Inc., Dallas, TX (United States)
2. Sandia National Labs., Albuquerque, NM (United States)

SrBi{sub 2}Ta{sub 2}O{sub 9} (SBT) films have received considerable attention for use as non-volatile memory elements. The authors have developed a process to prepare SBT films with good ferroelectric properties at low temperatures. In this paper, they will present strategies used to optimize the properties of the films including film composition, the nature of the substrate (or bottom electrode) used, and the thermal processing cycle. Under appropriate conditions, {approximately} 1,700 {angstrom} films can be prepared which have a large switchable polarization (2P{sub r} > 10{micro}C/cm{sup 2}), and an operating voltage {le} 2.0 V.

• Research Organization: Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 650293
• Report Number(s): SAND-98-0708C; CONF-980344-; ON: DE98003352; BR: DP0102031; TRN: AHC2DT04%%206
• Resource Relation: Conference: 10. international symposium on integrated ferroelectrics, Monterey, CA (United States), 1-4 Mar 1998; Other Information: PBD: Mar 1998
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
STRONTIUM OXIDES
BISMUTH OXIDES
TANTALUM OXIDES
CHEMICAL COATING
FERROELECTRIC MATERIALS
EXPERIMENTAL DATA
SUBSTRATES
MICROSTRUCTURE
ELECTRICAL PROPERTIES