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Title: Million-line failure distributions for narrow interconnects

Conference ·
OSTI ID:650183

The authors examine the distribution of failure times in a simple and computationally efficient, yet reasonably authentic, model of interconnect reliability that allows consideration of statistically significant samples. The model includes an approximate description of the distribution of grain sizes and texture in narrow interconnects, an effective treatment of stress evolution associated with mass transport along grain boundaries, and local relaxation of stresses due to void formation. Failure time distributions for populations of idealized structures are analyzed to aid in interpretation of model behavior.

Research Organization:
Sandia National Lab. (SNL-CA), Livermore, CA (United States)
Sponsoring Organization:
USDOE Office of Energy Research, Washington, DC (United States)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
650183
Report Number(s):
SAND-98-8554C; CONF-971201-; ON: DE98052863; TRN: AHC2DT04%%95
Resource Relation:
Conference: 1997 fall meeting of the Materials Research Society, Boston, MA (United States), 1-5 Dec 1997; Other Information: PBD: Dec 1997
Country of Publication:
United States
Language:
English