Patterning and overgrowth of nanostructure quantum well wire arrays by LP-MOVPE (low pressure Metalorganic Vapor Phase Epitaxy)

Conference · Fri Jun 01 00:00:00 EDT 1990

OSTI ID:6492747

Karam, N H; Mastrovito, A; Haven, V ^[1]; Ismail, K ^[2]; Pennycook, S ^[3]; Smith, H I ^[4]

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1. Spire Corp., Bedford, MA (USA)
2. International Business Machines Corp., Yorktown Heights, NY (USA). Thomas J. Watson Research Center
3. Oak Ridge National Lab., TN (USA)
4. Massachusetts Inst. of Tech., Cambridge, MA (USA). Dept. of Electrical Engineering and Computer Science

Nanometer scale GaAs Quantum Well Wire (QWW) arrays with lateral dimensions in the range of 10--70 nm and a period of 200 nm have been fabricated in the GaAs/AlGaAs system using x-ray nanolithography patterning and overgrowth by a low pressure Metalorganic Vapor Phase Epitaxy (LP-MOVPE) technique. The QWW structures were either fabricated by post-growth patterning of a thin GaAs film on a AlGaAs-coated substrate followed by AlGaAs deposition, or by continuous in-situ deposition of a GaAs/AlGaAs QWW structure on a prepatterned GaAs substrate. Although cross-sectional transmission electron microscopy showed no structural defects in either QWW fabrication process, photoluminescence (PL) was only observed in the in-situ-deposited structures. Strong polarization dependence of the PL peak with respect to wire orientation has been confirmed and evidence of lateral confinement was observed. 17 refs., 4 figs.

• Research Organization: Oak Ridge National Lab., TN (USA)
• Sponsoring Organization: USDOD; DOE/ER
• DOE Contract Number: AC05-84OR21400
• OSTI ID: 6492747
• Report Number(s): CONF-9006174-2; ON: DE91000717
• Resource Relation: Conference: 5. international conference on metalorganic vapor phase epitaxy, Aachen (Germany, F.R.), 18-21 Jun 1990
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
PHOTOLUMINESCENCE
GALLIUM ARSENIDES
SEMICONDUCTOR DEVICES
FABRICATION
DEPOSITION
ETCHING
ION IMPLANTATION
THIN FILMS
VAPOR PHASE EPITAXY
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
EPITAXY
FILMS
GALLIUM COMPOUNDS
LUMINESCENCE
PNICTIDES
SURFACE FINISHING
360601* - Other Materials- Preparation & Manufacture
360603 - Materials- Properties