Importance of ion energy on SEU in CMOS SRAMs
- Sandia National Labs., Albuquerque, NM (United States)
- CEA-DAM, Bruyeres-le-Chatel (France)
The single-event upset (SEU) responses of 16 Kbit to 1 Mbit SRAMs irradiated with low and high-energy heavy ions are reported. Standard low-energy heavy ion tests appear to be sufficiently conservative for technologies down to 0.5 {micro}m.
- Research Organization:
- Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 645600
- Report Number(s):
- SAND-98-0626C; CONF-980705-; ON: DE98005028; BR: DP0102022; TRN: 98:010219
- Resource Relation:
- Conference: IEEE nuclear and space radiation effects conference, Newport Beach, CA (United States), 20-24 Jul 1998; Other Information: PBD: Mar 1998
- Country of Publication:
- United States
- Language:
- English
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